Multilevel data storage memory using deterministic polarization control.
نویسندگان
چکیده
Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.
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عنوان ژورنال:
- Advanced materials
دوره 24 3 شماره
صفحات -
تاریخ انتشار 2012